Loading...
News Article

New generation of photodiodes from X-FAB

News

Robust, reliable devices have accentuated spectral responsiveness, along with notably improved signal-to-noise characteristics.

X-FAB Silicon Foundries has introduced additional optoelectronic device options to strengthen its extensive portfolio. Leveraging the company’s 180nm XS018 CMOS semiconductor process, which is specifically optimized for the fabrication of sensors, four new high-performance photodiodes have now been made available.

This new product offering consists of two enhanced-response photodiodes with increased sensitivity across UV, visible, and IR wavelengths (full-spectrum), along with two advanced UV dedicated photodiodes referred to as the doafe, dobfpe, dosuv, and dosuvr. The doafe is a full spectrum device featuring a ~730nm peak sensitivity. At 730nm, the spectral responsiveness of this device is 0.48A/W. A wide range of applications rely on such photodiode performance, including smoke detection, position sensing, or spectrometry. They benefit from a ~15% better sensitivity and over 50% smoother responsiveness than the previous generation.

Also available is the dobfpe, which is particularly effective in the red and NIR parts of the spectrum (with a peak sensitivity around 770nm). The dobfpe has improved sensitivity in the IR range, with about 25% improvement compared to the company’s prior dob device. This improved diode is insensitive to UV and blue light and has a distinct spectral response function with a clear peak in the IR, making it the ideal choice for proximity sensing applications. These new devices provide enhanced performance with increased sensitivity for proximity sensing, particularly when the ambient light and proximity sensors are placed under the screen panel.

Complementing those options, X-FAB has announced a new advanced UV photodiode- dosuv – which exhibits heightened sensitivity in the UVC band (200nm to 280nm). The company's engineering team reports that at 260nm, this best-in-class product delivers nearly double the performance of anything previously available. At 235nm, it has a 0.16A/W spectral responsivity. There is also the dosuvr, which is a reference device for use in dosuv-based development work.

These photodiodes offer similar fill factors and photocurrent figures to previous generation devices, while requiring approximately 20% less chip area. Consequently, they will prove much easier to integrate. Their dark current values are also small, meaning that good signal integrity characteristics are exhibited. An operational temperature range that spans from -40°C to 175°C is supported.

As Heming Wei, X-FAB’s Technical Marketing Manager for Optoelectronics, explains: “These latest photodiodes deliver stand-out performance attributes. They present customers with enhancements that are equivalent to what would be expected from moving down to a smaller process node. This underlines the effectiveness of our XS018 process platform to deliver light sensing devices which outclass the competition in terms of their operational capabilities and reliability.”

Simulation models for each of the new photodiodes are now available. Using these, customers can assess the electrical and optical behavior demonstrated.

Survey predicts photomask growth
Shaping tomorrow's semiconductor industry
Terecircuits unveils new bonding material
Busch Group promotes Vacuum Technology and Gas Abatement solutions
Photonics key to limitless clean energy
PhotonDelta launches €50,000 global photonics engineering contest
ZEISS Microscopy showcases AI-powered failure analysis
New generation of photodiodes from X-FAB
imec accelerates Automotive Chiplet Program
Accelerating clean energy adoption in Singapore’s semiconductor industry
Advantest announces Call for Papers for VOICE 2025 Developer Conference
SEMICON Europa 2024 to spotlight innovation and collaboration
Significant EU funding for VTT's semiconductor development
ZEISS Microscopy opens Semiconductor Applications Laboratory in Dresden
CMOS Image Sensor for automotive cameras
SK hynix begins volume production of 12-Layer HBM3E
DuPont expands photoresist manufacturing capacity
Sivers Semiconductors receives $5.6 million CHIPS Act funding
Heronic Technologies to enter strategic discussions with ROHM
Significant EU funding for VTT's semiconductor development
eBeam Initiative survey predicts photomask growth
SONOTEC presents Compact Flow Meter Series at ICPT Conference
SIAE MICROELETTRONICA selects EnSilica
Veeco Instruments reduces critical shortages by 50% with LeanDNA
Central State University to spearhead semiconductor research
UTEP establishes collaboration with DoD and NSA
Purdue receives grant funding in all three areas of NSF semiconductor research program
POET and Mitsubishi Electric collaborate
Critical Manufacturing welcomes Jeff Winter as head of business strategy
Fraunhofer IPMS bids farewell to its long-standing institute director
Sivers Semiconductors receives CHIPS Act funding
Aeluma wins $11.717 million DARPA contract
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Silicon Semiconductor Magazine, the Silicon Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: