Renesas’ Gen6 DDR5 Registered Clock Driver sets performance benchmark
The new RCD is the first to achieve a data rate of 9600 Mega Transfers Per Second (MT/s), surpassing the industry standard. This breakthrough marks a significant leap from the 8800 MT/s performance of Renesas’ Gen5 RCD, setting a new standard for memory interface performance in data center servers.
Key Features of Renesas’ Gen6 DDR5 RCD
10% Bandwidth Increase over Renesas’ Gen5 RCD (9600 MT/s versus 8800 MT/s)
Backward Compatibility with Gen5 Platforms: Provides seamless upgrade path
Enhanced Signal Integrity and Power Efficiency: Enables AI, HPC, and LLM workloads
Expanded Decision Feedback Equalization Architecture: Offers eight taps and 1.5mV granularity for superior margin tuning
Decision Engine Signal Telemetry and Margining (DESTM): Improved system-level diagnostics provides real-time signal quality indication, margin visibility, and diagnostic feedback for higher speeds
The new DDR5 RDIMMs are needed to keep pace with the ever-increasing memory bandwidth demands of Artificial Intelligence (AI), High-Performance Compute (HPC) and other data center applications. Renesas has been instrumental in the design, development and deployment of the new RDIMMs, collaborating with industry leaders including CPU and memory providers, along with end customers. Renesas is the leader in DDR5 RCDs, building on its legacy of signal integrity and power optimization expertise.
“Explosive growth of generative AI is fueling higher SoC core count. This is driving unprecedented demand for memory bandwidth and capacity as a critical enabler of data center performance,” said Sameer Kuppahalli, Vice President of Memory Interface Division at Renesas. “Our sixth generation DDR5 Registered Clock Driver demonstrates Renesas’ continued commitment to memory interface innovation, path-finding and delivering solutions to stay ahead of market demand.”
“Samsung has collaborated with Renesas across multiple generations of memory interface components, including the successful qualification of Gen5 DDR5 RCD and PMIC5030,” said Indong Kim, VP of DRAM Product Planning, Samsung Electronics. “We are now excited to integrate Gen6 RCD into our DDR5 DIMMs, across multiple SoC platforms to support the growing demands of AI, HPC, and other memory-intensive workloads.”
