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Monday 5th July 2004
The UK's University of Leeds has bought a V80H molecular beam epitaxy (MBE) instrument from Oxford Instruments to supply complex heterostructure devices for terahertz optoelectronics research. The tool will be used in a recently completed 160m2 photonics laboratory in the School of Electronic and Electrical Engineering.
Monday 5th July 2004
IBM opened a European RFID Testing & Solution centre in La Gaude, France. Existing IBM development centres are sited in Gaithersburg, US, and in Tokyo, Japan. The European centre aims to offer a true end-to-end RFID solution, including the middleware needed to integrate the technology to back-end systems.
Monday 5th July 2004
Micron Technology plans to produce NAND Flash memory solutions targeting memory cards, USB devices and other mass storage applications.
Monday 5th July 2004
A paper studying the incidence of cancer at IBM fabs has sparked an author boycott of an Elsevier health journal.
Thursday 1st July 2004
Inotera Memories in Taiwan officially inaugurated its 300mm semiconductor production facility.
Thursday 1st July 2004
The Silterra Malaysia foundry and the IMEC European R&D centre have signed an agreement for a joint development project (JDP) with the intention of creating a foundry-compatible 0.13micron CMOS process technology.
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Thursday 1st July 2004
Malaysia's Unisem has completed acquisition of IC packaging and test company Atlantic Technology in Wales.
Thursday 1st July 2004
STMicroelectronics (ST) president/CEO Pasquale Pistorio will chair the technology platform group of a new European Nanoelectronics Initiative Advisory Council (ENIAC), where leading European players in the micro- and nanoelectronics field will work together to develop and implement a coherent European vision for the coming nanoelectronics era.
Thursday 1st July 2004
Taiwan based Siliconware Precision Industries (SPIL) has ordered lithography systems and coat/bake/develop tracks from SUSS MicroTec.
Thursday 1st July 2004
Texas Instruments (TI), STMicroelectronics and Motorola's Freescale Semiconductor experienced declining market share in wireless IC sales in 2003, according to iSuppli.
Thursday 1st July 2004
Infineon has made a 10% improvement (typical) in linear efficiency on its new GOLDMOS high-power RF transistors process, compared with the previous generation.
Thursday 1st July 2004
IBM has developed a high-speed photodetector based on a germanium-on-insulator (GOI) technology that could allow ready incorporation into standard chipmaking processes.
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Thursday 1st July 2004
Toshiba has produced a prototype of a highly compact (22x56x4.5mm) direct methanol fuel cell (DMFC) that can be integrated into devices as small as digital audio players and wireless headsets for mobile phones.
Thursday 1st July 2004
FEI opened an enhanced campus in Eindhoven, the Netherlands, along with NanoPort - a new, state-of-the-art product and applications centre where users can develop applications and assess technology prior to purchase. NanoPort will bring together the expertise of outside scientists and FEI developers.
Thursday 1st July 2004
Varian Semiconductor Equipment Associates (VSEA) filed a patent infringement action against Japan's Nissin Ion Equipment in a US district court.
Thursday 1st July 2004
The European Union and the USA concluded an agreement on the GALILEO and GPS satellite navigation systems at the end of a joint summit in Ireland.
Wednesday 30th June 2004
STMicroelectronics (ST) president/CEO Pasquale Pistorio will chair the technology platform group of a new European Nanoelectronics Initiative Advisory Council (ENIAC), where leading European players in the micro- and nanoelectronics field will work together to develop and implement a coherent European vision for the coming nanoelectronics era.
Wednesday 30th June 2004
The Silterra Malaysia foundry and the IMEC European R&D centre have signed an agreement for a joint development project (JDP) with the intention of creating a foundry-compatible 0.13micron CMOS process technology. The process will be based on IMEC's 0.13micron platform and modified to meet the requirements of wafer foundry customers.
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Wednesday 30th June 2004
Taiwan based Siliconware Precision Industries (SPIL) has ordered lithography systems and coat/bake/develop tracks from SUSS MicroTec. SPIL is one of the world's largest semiconductor packaging and testing companies. This new business represents additional follow-on 300mm business from this customer.
Wednesday 30th June 2004
Malaysia's Unisem has completed acquisition of IC packaging and test company Atlantic Technology in Wales. Atlantic is claimed as Europe's most comprehensive semiconductor assembly and test facility in the contract-manufacturing marketplace. The Welsh company has become Unisem (Europe). Unisem has acquired Atlantic from its management.
Wednesday 30th June 2004
Inotera Memories in Taiwan officially inaugurated its 300mm semiconductor production facility. The joint venture between Infineon Technologies and Nanya Technology will make memory ICs at what is claimed as the world's largest and most competitive 300mm DRAM production site with a total capacity of more than 50,000 wafer starts per month when fully operational. The first DRAM chips using 110nm trench technology are already rolling off the production line.
Monday 28th June 2004
Infineon has made a 10% improvement (typical) in linear efficiency on its new GOLDMOS high-power RF transistors process, compared with the previous generation. The IC producer continues to use gold metallisation, it says, because of proven superior reliability at high temperatures. Other improvements come in the form of ultra-wide-bandwidth, reduced memory effect and the industryÕs best thermal performance. Power density has increased by 30%.
Monday 28th June 2004
Varian Semiconductor Equipment Associates (VSEA) filed a patent infringement action against JapanÕs Nissin Ion Equipment in a US district court. Varian Semiconductor charges that Nissin's medium current ion implanter infringes Varian Semiconductor's US patents for "Ion Beam Scanning Method and Apparatus" and "High Speed Movement of Workpieces in Vacuum Processing".
Friday 25th June 2004
IBM has developed a high-speed photodetector based on a germanium-on-insulator (GOI) technology that could allow ready incorporation into standard chipmaking processes. The company hopes for applications designed to greatly increasing the speed at which information travels to and from microchips over optical connections. Existing silicon (Si) photodetectors are inadequate for the speeds needed for optical interconnects.

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