SUSS MicroTec reports that it has delivered the world's first semi-automatic pressure chamber prober to their MEMUNITY partner DELTA (Danish Electronics Light and Acoustics). The PAP200 probes in a controlled environment from 1mbar vacuum up to 50bar - the pressure at 500m below sea level.
SUSS MicroTec’s French subsidiary has signed a joint development programme agreement with European microelectronics research centre IMEC on bonding technologies for micro-electro-mechanical system (MEMS) production.
Researchers at Infineon Technologies says that they have succeeded, for the first time, in using carbon nanotubes to manufacture power semiconductors. The nanotube switch can control light emitting diodes (LEDs) or electric motors. The scientists consider this a breakthrough, since it was previously assumed that atomic-scale components were not suitable for the high voltages and currents used in power applications.
UK-based AML has abandoned the design house/foundry model for the fabrication of micro-electro-mechanical system (MEMS) devices that it has been pursuing for a number of years. The company says that the approach does not work since the foundry production processes are too inflexible for the fabrication of the wide variety of MEMS devices being proposed – it’s like asking the Mini car production line in Oxford, UK, to make coffee cups.
Bilkent University of Ankara in Turkey has ordered an AIX 200/4 RF-S MOCVD system from Aixtron. Bilkent's Department of Physics has decided on a new research focus - AlGaN based devices used as UV photodetectors. These devices could be used in medical applications. Bilkent has invested in a new institute building with cleanroom facilities to house this activity.
Nikon says that it has accelerated its development plans for ArF immersion and will ship a system with a projection lens numerical aperture (NA) of greater than or equal to 1.0 in H2 2005. Nikon's previous plan was to market an immersion system with an NA of 0.92 by mid 2005.
STMicroelectronics inaugurated its third state-of-the-art design and development facility in India at Noida, near New Delhi. The new wing will be able to house 550 additional skilled design/embedded software engineers.
Infineon Technologies has joined the X Initiative semiconductor supply-chain consortium. Infineon has tested its X Architecture manufacturing readiness with the successful fabrication of a 130nm test chip and plans to further validate production designs in 2004.
The European Commission approved investment aid in favour of Wacker Siltronic for the construction of a new plant for the production of 300mm wafers in Freiberg, Saxony. The aid authorised covers 28% gross of eligible investment costs of EUR431.8mn. This investment project is expected create about 634 jobs directly with the firm and more than 223 additional jobs in the assisted region.
ThyssenKrupp Hoesch Bausysteme has ordered 1MW of photovoltaic (PV) panels from United Solar Ovonic, a supplier of thin-film amorphous-silicon solar technology. Thyssen will use the panels in Germany’s building-integrated PV market. Panels capable of producing 500kW have already been shipped. The balance will be shipped before April 2004.
Infineon Technologies’ researchers will be presenting a range of new technologies at the International Solid-State Circuits Conference (ISSCC 2004) this week. These presentations consist of papers on DNA sensor chips, RFID circuits/packaging and an analogue digital converter (ADC) built on a 90nm process, along with four separate papers on high-speed communications circuits.
IBM has used a combination of silicon-on-insulator (SOI), strained silicon and copper wiring technologies to manufacture low power, high performance microprocessors. The integration of the three leading edge techniques is claimed as an industry first.
Sony and Toshiba are to collaborate in the development of 45nm process and design technologies for next-generation system large-scale integration (LSI). This extends the companies’ successful development of 65nm process technologies to the next level. Positive 45nm results are expected in 2005.
All of STMicroelectronics’ relevant manufacturing sites have achieved certification to the occupational health and safety management system OHSAS 18001 specification. ST reports that it is the first global semiconductor manufacturer in the world to achieve this.
Micron Technology has introduced three new CMOS image sensor including a 1.3Mpixel device. The MT9M011 1.3Mpixel image sensor is the company's first megapixel sensor designed specifically for the mid- to high-end mobile market such as smart and 3G phones.
Sumitomo Chemical and Cambridge Display Technology (CDT) agreed joint development of high efficiency polymer organic light-emitting diode (OLED/PLED) display materials. The agreement is for co-operation in the development and scale-up of a range of solution processable, PLED materials, designed for use primarily in the manufacture of flat panel displays.
Infineon Technologies plans to expand its Memory Development centre at its Dresden location in Germany. The company wants to strengthen and extend development of 300mm process technology, particularly for DRAM and Flash products.
Oxford University’s Isis technology commercialisation body is seeking interested parties in a simple technique for separating high value semiconducting carbon nanotubes from mixed samples of single- and multi-walled carbon nanotubes.
STMicroelectronics has been granted ISO/TS16949:2002 certification for all of its sites, including non-manufacturing sites. The certification covers both the ISO9001:2000 standard and the new TS16949:2002 standard that applies the much more demanding quality criteria of the automotive industry.
Micronic Laser Systems has decided to discontinue the Sigma7100, which will be replaced by Sigma7300. The Sigma7000 series uses an array of micromirrors to produce images in parallel, promising higher throughput. The mirror system was developed with the Fraunhofer Institute for Microelectronic Circuits and Systems (IMS).