Technical University of Clausthal physicists have made progress in characterising the atomic structure of silicon/silicon dioxide interfaces (Physical Review Letters, Volume 93, No.9, on-line August 27, 2004). Using a nonlinear optical method, Dr Stefan Bergfeld, Bjoern Braunschweig and Professor Winfried Daum studied the change in bond structure of interfacial atoms during the oxidation of a (111)-oriented silicon surface. The scientists also observed the changes in bonding states after thermal oxidation.
Technical University of Clausthal physicists have made progress in characterising the atomic structure of silicon/silicon dioxide interfaces (Physical Review Letters, Volume 93, No.9, on-line August 27, 2004).
The US Semiconductor Industry Association (SIA) is seeking proposals from interested investigators for the conduct of an independent retrospective epidemiological study of US semiconductor wafer fabrication workers.
A team of California Institute of Technology (Caltech) researchers reports a new method for coating single-walled carbon nanotubes (SWNTs) attached to atomic force microscope (AFM) tips with conformal fluorocarbon polymers formed in an inductively coupled plasma reactor (Nano Letters).
Japanese researchers claim to have reduced the number of dislocations in silicon carbide crystals by two to three orders of magnitude (Nature, August 26, 2004). "These substrates will promote the development of high-power SiC devices and reduce energy losses of the resulting electrical systems," the scientists write. Other applications for SiC are seen as high frequency and high temperature.
The National Research Council of Canada's Industrial Materials Institute (NRC-IMI) joined the Nano Imprint Lithography (NIL) consortium that Austrian company EV Group (EVG) formed last year. The consortium is working to commercialise advanced NIL technologies.
UK R&D company Innos and the University of Southampton have jointly patented a new technique that enables the suppression of boron diffusion in silicon-germanium (SiGe) using fluorine implantation. Research conducted at Innos' new facilities has shown that a properly optimised fluorine implant not only eliminates transient enhanced diffusion of boron, but also dramatically reduces normal boron thermal diffusion.
No surprises have emerged to prevent the introduction of 193i for 65nm half-pitch in 2007, according to International SEMATECHÕs international symposium on immersion and 157nm lithography. The outlook is also positive for its extension to 45nm half-pitch and possibly below. Potential solutions for achieving the latter include hyper-numerical aperture, improved lens design, high refractive-index fluids, high-index resists and lens material, double exposure, and related infrastructure.
The US Semiconductor Industry Association (SIA) is seeking proposals from interested investigators for the conduct of an independent retrospective epidemiological study of US semiconductor wafer fabrication workers. A request for proposals (RFP) has been made to public and private institutions - including universities, colleges, laboratories, and governmental agencies - to conduct the study. The principal focus of the study will be the assessment of cancer risk among workers employed in US semiconductor wafer fabrication facilities over a period of more than three decades, from the late 1960s to the present.
ASM International is setting up its first wafer processing equipment plant in Singapore this month. The plant will have 13,940m2 of total available floor area and 2787m2 of clean room facilities. The plant will have 50 employees by the end of the year, with this expected to rise to 200-300 new people within three years.
Intense Photonics has gained additional funds to expand its design and volume fabrication of optoelectronic components and modules. A GBP5mn ($9.2mn) funding round was supported by all the company's financial investors - 3i, ACT Venture Capital, Alice Ventures, Cazenove Private Equity, FNI Venture Capital and TTP Ventures.