The UK government has awarded funding to Trikon Technologies to develop “Broad Ion Beam Deposition” (BIBD) technology for 300mm magnetoresistive random access memory (MRAM) manufacture. The total value of the award is up to 50% of the project value of GBP3.29mn ($5.92mn), with the work expected to last 18 months.
A quantum mechanical 3D simulator for semiconductor devices has been created under the EU Nanotechnology Computer Aided Design (NANOTCAD) project. The Simulator for Nanodevices (SIMNAD) can be used to compute the quantum mechanical charge density and tunnel probabilities in semiconductor nano-structures of diverse material geometries. SIMNAD acts complementarily to the commercial DESSIS-ISE device simulator, allowing the interchange of data and simulations in coupled mode. The coupling scheme of the two simulators provides a package enabling the simultaneous modelling of a 3D quantum-mechanical charge distribution in a sub-region of a larger device, which is under full operation.
IBM and SUSS MicroTec have signed an agreement to develop and commercialise IBM's next-generation, 100% lead-free semiconductor packaging technology called the Controlled Collapse Chip Connection New Process (C4NP).
Defence electronics specialist Thales and the French atomic energy commission CEA have formed a new joint laboratory to work on radio frequency micro electro mechanical systems (RF MEMS). It is hoped to use microelectronics and electro-mechanical functions to miniaturise certain critical microwave components while improving their performance.
Acreo in Sweden is looking for partners where its capability for advanced and special-purpose surface treatment, chip mounting and wire bonding can be further exploited and advanced. Partners within the industrial or university R&D sectors are of interest.
The European Solar Test Installation (ESTI) at the European Commission's Joint Research Centre has been awarded Accredited Calibration Laboratory status. ESTI has become the first laboratory world wide to independently demonstrate the calibration and traceability of the power measurements of solar electricity systems to the SI international system of units.
Japan's Ricoh has licensed Sarnoff Europe's TakeCharge technology, which allows integrated circuit (IC) designers to create on-chip electrostatic discharge (ESD) protection circuitry. This enables robust specification performance on first implementation, shortening time to market by eliminating costly, time-consuming redesigns.
Taylor Hobson, IQE, and Applied Multilayers are to take part in a new, UK government project to develop new nano metrology technologies with a GBP1mn share of a GBP18mn UK government grant to fund research and product development.
Intel has built fully functional 70Mbit static random access memory (SRAM) chips with more than half a billion transistors on a die area of 110mm2 using a 65nm process technology. The transistor gates measure 35nm, approximately 30% smaller than the gate lengths on the company's previous 90nm technology. Each SRAM memory cell has six transistors packed into an area of 0.57micron2.
Taylor Hobson, IQE, and Applied Multilayers are to take part in a new, UK government project to develop new nano metrology technologies with a GBP1mn share of a GBP18mn UK government grant to fund research and product development. Other partners include the UK National Physical Laboratory and The Centre for Precision Technologies at The University of Huddersfield.
The European Commission wants to start negotiations at the end of September on a co-operation agreement with Ukraine on the development of a civil Global Navigation Satellite System (GNSS) based on the European Union-led GALILEO development. European Council of Ministers approval has been sought for the move.
An Israeli Ministry of Health committee has investigated the death of an Israeli patient several days following his ingestion of a video camera capsule developed by Israeli company Given Imaging. The committee established that there was no connection between the capsule and the patient's death.