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Wednesday 14th May 2003
The X-FAB mixed signal foundry announced availability of 16 new process options for its 0.6micron CMOS process family. These processes can be combined in a modular fashion to fit specific application needs.
Wednesday 14th May 2003
The austriamicrosystems foundry has extended its design environment support based on the Mentor Graphics IC design flow. This includes high-performance design kits (HIT-Kits) for analogue/mixed-signal (AMS) and radio frequency (RF) designs on austriamicroysystems 0.35micron CMOS and BiCMOS process technologies.
Wednesday 14th May 2003
Osram Opto Semiconductors announced the brand name for its organic light emitting diode (OLED) products and technology – Pictiva.
Wednesday 14th May 2003
SI Diamond Technology’s Applied Nanotech (ANI) subsidiary says it has successfully demonstrated electron emission current densities of at least 15A/cm2 using a gated carbon nanotube electron source.
Wednesday 14th May 2003
E Ink Corporation and Philips Electronics have jointly developed prototype electronic ink displays. Engineering samples have been produced for a lead customer. The display features a resolution at 160 pixels per inch (ppi).
Wednesday 14th May 2003
Microsystem producer PHS MEMS announced the availability of custom micro-electro-mechanical system (MEMS) based integrated passive devices (IPDs) and advanced processes to use within RF modules for wireless hand-held equipment and for other mobile applications.
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Wednesday 14th May 2003
MPC (formerly MicronPC) has designed STMicroelectronics TouchChip fingerprint BIOS and data security system into its newest thin and light notebook computers, the TransPort T2100 and T2000.
Wednesday 14th May 2003
The Institute of Semiconductor Chinese Academy of Science (ISCAS) in Beijing has expanded its R&D capability by installing an R&D Closed Coupled Showerhead (CCS) MOCVD reactor provided by Thomas Swan Scientific Equipment (TSSE).
Wednesday 14th May 2003
Toshiba Matsushita Display Technology (TMD) has developed a new "input display" technology that is able to capture images directly via sensors within a thin film transistor (TFT) liquid crystal display (LCD).
Friday 9th May 2003
TRONICS Microsystems is extending its custom micro-electro-mechanical systems (MEMS) production facilities in Crolles, France. The company will insert a new cleanroom into an existing facility with work to be completed by July and full volume production by year-end.
Wednesday 7th May 2003
Nanotechnology consulting company Científica has expanded its business with the opening of new offices in London, UK, New York, USA, and Mumbai, India. The information and consulting business will relocate to London. New York and London are the cities where many of the commercial decisions concerning the future of nanotechnology will be taken.
Thursday 6th February 2003
Dutch researcher Michiel Blauw of the Delft Institute of Microelectronics and Submicrotechnology (DIMES) gained his PhD on January 19, 2004, for work on improved fluorine-based plasma etch of deep, narrow microstructures in silicon. Blauw studied how the plasma reacts with the silicon and how the sidewalls must be treated so as to make the trench as deep and as straight as possible.
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Wednesday 1st January 2003
IC test equipment company Advantest plans to develop a fast, accurate failure diagnostics solution for deep-submicron, high-speed system-on-chip (SoC) designs using TetraMAX automatic test pattern generation (ATPG) technology from electronic design automation (EDA) tool provider Synopsys. The tool under development will use data communication between the company's T6000 series ATE system and Synopsys' TetraMAX ATPG tool to streamline the process of detecting failures.
Wednesday 1st January 2003
Fujitsu Laboratories has developed a technique for vertical growth and diameter control of multi-wall carbon nanotubes on a silicide layer for constructing MOSFET electrodes (gate, drain, and source). Deposition was by plasma-enhanced CVD. An electric field perpendicular to the wafer surface induced nanotube growth aligned with the field. Varying the nickel and cobalt content of the silicide controls the tube diameters. The company says the technique is
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