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Monday 27th October 2003
EV Group (EVG) has joined an IMEC joint development on wafer-level packaging and micro-electro-mechanical system (MEMS) wafer bonding. EVG also becomes an official partner in IMEC's Industrial Affiliation Program (IIAP) on "wafer-level-packaging on Cu/low-k back-end-of-line" and will supply IMEC with new state-of-the-art mask alignment, spray-coating and wafer bonding tools.
Monday 27th October 2003
Infineon Technologies says that its new LightMOS insulated gate bipolar transistor (IGBT) offers up to 25% annual cost reductions when used in electronic lamp ballasts (ELB) compared with conventional magnetic lamp ballasts.
Monday 27th October 2003
Motorola China Electronics and Semiconductor Manufacturing International Corporation (SMIC) have agreed a long-term, strategic relationship.
Monday 27th October 2003
ASML Optics’ PerfectWave metrology standard enables reliable measurement of dimensions approaching the atomic scale. Flatness variation of the disk is just 1nm, or about 10 atomic layers, across its 100mm diameter.
Monday 27th October 2003
MEMSCAP has entered into a definitive agreement to acquire the Grenoble-based company Opsitech in France. The acquired company is a spin-off from the French "Laboratoire d'Electronique et des Technologies de l'Information (LETI)" of the "Commissariat a l'Energie Atomique (CEA)". Opsitech specialises in integrated optics that can be associated with micro-electro-mechanical systems (MEMS).
Monday 27th October 2003
Maxim Integrated Products has bought Philips’ 200mm semiconductor wafer fabrication facility in San Antonio, Texas. Maxim believes that the facility is capable of producing revenues of $500 million per year. The purchase price for the campus, facility, and all equipment is $40mn.
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Monday 27th October 2003
Motorola reports that it has produced the world's first 4Mbit magnetoresistive random access memory (MRAM) chip. Select customers are currently evaluating samples.
Friday 17th October 2003
Infineon Technologies is to outsource payroll accounting, major parts of recruitment and student intern hosting in Germany and Austria. The company taking up these activities for Infineon is EDS of Russelsheim, Germany.
Friday 17th October 2003
Infineon, Intel, Philips, Samsung Electronics and STMicroelectronics have joined IMEC’s new sub-45nm research platform as "core partners". IMEC has a target of eight to ten core partners in all. The work will involve use of IMEC’s 300mm "research foundry" facility currently under construction.
Thursday 9th October 2003
Omron has developed a front-light manufacturing technology designed to create brighter, clearer liquid crystal display (LCD) screens while reducing power consumption. The technique is based on a hybrid integration of a nano prism array (200nm) with a micro prism array (3microns). The key parameters for screen lighting are low power consumption, brightness and contrast. The technique achieves a three-fold improvement in contrast ratio compared with front lights manufactured by other companies, says Omron.
Thursday 9th October 2003
Philips is to participate as a core partner in IMEC's sub-45nm research programmes. Research will start on 200mm and gradually transition to 300mm.
Thursday 9th October 2003
Motorola intends to separate its semiconductor operations into a publicly traded company. The move aims to increase the company’s focus on communications and integrated electronic systems.
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Thursday 9th October 2003
Motorola is to provide Honeywell with access to magneto-resistive random access memory (MRAM) non-volatile memory chip technology, under a technology transfer and licensing agreement.
Thursday 9th October 2003
STMicroelectronics’ Discretes and Standard ICs Group (DSG) plans to advise and provide technical support to Carsem in development of copper clip interconnects for Micro Leadframe Packages (MLPs), under a memorandum of understanding between the companies.
Monday 6th October 2003
BAOBERLIN in Germany has developed a high power light emitting diode (HL-LED). The company says that the device generates 20 times higher light output because currents reach 600mA rather than the 30mA typical with 2.8x3.2mm2 formats.
Monday 6th October 2003
SUSS MicroTec has developed a method of plasma surface activation and wafer to wafer bonding for silicon on insulator (SOI) and strained silicon applications. nano PREP reduces the process temperature to 200C allowing new applications for wafer level integration of CMOS and micro-electro-mechanical systems (MEMS) or CMOS and nanotechnology. The technology uses atmospheric pressure plasma to generate a molecular level surface modification to enable the low temperature bonding.
Friday 3rd October 2003
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Friday 3rd October 2003
Infineon Technologies is offering lead- (Pb-) and halogen-free DRAM components and memory modules.
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Friday 3rd October 2003
The University of Duisburg has developed an optical measurement technique for quality control of nano electronic circuits that are developed using nano imprint lithography (NIL). The system was produced in co-operation with a microelectronic manufacturer.
Friday 3rd October 2003
Sigma-C has raised $2.87mn in a first round of financing from Deutsche Venture Capital (DVC). Sigma-C plans to use the money to accelerate the launch of design-to-manufacture software products for the semiconductor industry that more closely link electronic design automation (EDA) software, photomask production and wafer fabrication.
Friday 3rd October 2003
Carl Zeiss Microelectronic Systems GmbH (MES) of Jena has changed its name to Carl Zeiss SMS GmbH (Semiconductor Metrology Systems). The subsidiary of Carl Zeiss SMT AG will combine the activities of the former MES subsidiary and LEO Electron Microscopy. Carl Zeiss SMS currently has more than 80 employees.
Friday 3rd October 2003
Toshiba has produced a prototype of a compact, direct methanol fuel cell (DMFC). The company believes that this opens the way to the use of DMFC as an alternative power source to recharge batteries for personal devices.
Friday 3rd October 2003
The European IMEC research centre has installed a SUSS PAV150 at its Leuven (Belgium) facility to test micro-electro-mechanical system (MEMS) devices (in particular RF MEMS) in a high vacuum environment. The system enables reliability tests of MEMS under real-life conditions.
Wednesday 1st October 2003
IBM claims to be the first to build SiGe bipolar devices using thin layer silion-on-insulator (SOI) wafers. The company believes that this paves the way to building SiGe bipolar and CMOS circuits on the same thin SOI wafer, maximising the performance of both the computing and communications functions.

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