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Wednesday 30th September 2015
Close cooperation with Ferdinand-Braun-institut to lay foundations for future applications
Wednesday 30th September 2015
Tuesday 29th September 2015
IC design and supply company ICsense concludes its 10th year of operation with 35 percent EBITDA growth.
Tuesday 29th September 2015
Korean researchers grow 4-inch diameter, high-quality, multi-layer graphene on desired silicon substrates, an important step for harnessing graphene in commercial silicon microelectronics
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Tuesday 29th September 2015
CAPTION/CREDIT: Complex, scalable arrays of semiconductor heterojunctions—promising building blocks for future electronics—were formed within a two-dimensional crystalline monolayer of molybdenum deselenide by converting lithographically exposed regions to molybdenum disulfide using pulsed laser deposition of sulfur atoms. Sulfur atoms (green) replaced selenium atoms (red) in lithographically exposed regions (top) as shown by Raman spectroscopic mapping (bottom). Image credit: Oak Ridge National Laboratory, U.S. Dept. of Energy
Monday 28th September 2015
Monday 28th September 2015
Ultrafast laser pulses can manipulate ‘bubble’ domains for future spintronic and logic devices
Friday 25th September 2015
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Tuesday 22nd September 2015
Tuesday 22nd September 2015
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Tuesday 22nd September 2015
EBSD image showing the local structure of a thin film. The left half of these images shows the preferred direction of the LaSrMnO3-film perpendicular to the growth direction, while the right half shows the directions in the plane with the contours of the individual nanosheets clearly visible. The distance between two lines in the pattern is a few micrometers. Credit: Image courtesy of University of Twente
Friday 11th September 2015

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