News Article
CNR-IMM Italy uses SENTECH SI PEALD system for new high-k materials
The Institute for Microelectronics and Microsystems (CNR-IMM/1/) in Catania, Italy is using a SENTECH SI PEALD LL tool with an 8-inch wafer configuration. The research Institute belongs to the Physics and Matter Technologies Department (DSFTM) of the National Research Council of Italy (CNR), and has its headquarters in Catania. The integration of novel high-k gate dielectrics and passivating layers on devices based on Gallium Nitride and other wide band gap semiconductors is investigated using SENTECH PEALD tool. SENTECH proprietary true remote CCP plasma source is especially suited for such low temperature and no damage applications. The special design of the plasma source only allows radicals to reach the wafer surface. High energy photons and ions are completely blocked.
Contextually, IMM and SENTECH have signed a Joint Development Agreement with the objective of the development and characterization of laminated layers. The use of alternative high-k materials favors downsizing of the devices while keeping constant their capacitance values and reducing the leakage current density. In particular, the growth of Al2O3-HfO2 laminated layers is among the most often used combinations for such applications.
"The SENTECH SI PEALD LL reactor is a high performance and flexible system, allowing the production of several high quality dielectric thin films, whose physical properties can be tailored upon changing their chemical composition.", says Dr Raffaella Lo Nigro who is the scientist in charge of the SI PEALD LL tool and of cooperation with SENTECH. Dr Lo Nigro has wide ranging expertise in the synthesis of binary and complex thin films by chemical
Contextually, IMM and SENTECH have signed a Joint Development Agreement with the objective of the development and characterization of laminated layers. The use of alternative high-k materials favors downsizing of the devices while keeping constant their capacitance values and reducing the leakage current density. In particular, the growth of Al2O3-HfO2 laminated layers is among the most often used combinations for such applications.
"The SENTECH SI PEALD LL reactor is a high performance and flexible system, allowing the production of several high quality dielectric thin films, whose physical properties can be tailored upon changing their chemical composition.", says Dr Raffaella Lo Nigro who is the scientist in charge of the SI PEALD LL tool and of cooperation with SENTECH. Dr Lo Nigro has wide ranging expertise in the synthesis of binary and complex thin films by chemical
