Toshiba Unveils UFS Devices Utilizing 64-layer, 3D Flash Memory
Toshiba Memory America, Inc. (TMA)*, has begun sampling
Universal Flash Storage (UFS) devices utilizing its cutting-edge 64-layer
BiCS FLASH 3D flash memory. The new UFS devices meet performance demands
for applications that require high-speed read/write performance and low power
consumption, including mobile devices such as smartphones and tablets and
augmented /virtual reality systems.
The new lineup will be available in four capacities: 32
gigabyte (GB), 64GB, 128GB, and 256GB. All of the devices integrate flash
memory and a controller in a single, JEDEC-standard 11.5x13mm package. The
controller performs error correction, wear leveling, logical-to-physical
address translation, and bad-block management "“ allowing users to simplify
All four devices are compliant with JEDEC UFS Ver. 2.1, including
HS-GEAR3, which has a theoretical interface speed of up to 5.8Gbps per lane (x2
lanes=11.6Gbps) while also suppressing any increase in power consumption.
Sequential read and write performance of the 64GB device are 900MB/sec and
180MB/sec, while the random read and write performance are approximately 200
percent and 185 percent better, respectively, than those of previous generation
devices. Due to its serial interface, UFS supports full duplexing, which
enables both concurrent reading and writing between the host processor and UFS
Toshiba was the first company in the world to announce 3D
flash memory technology, and the addition of 3D-based UFS keeps the company at
the forefront of innovation while simultaneously enhancing its existing lineup
of BiCS FLASH solutions.
"By bringing our industry-leading BiCS FLASH technology to
UFS, we continue to expand the capabilities of our embedded storage solutions,"
noted Scott Beekman, director of managed flash memory products for TMA. "Higher
performance, good power efficiency and an expanded density lineup all enable
existing and future applications to realize new possibilities."