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Edwards Celebrates Centenary at SEMICON Korea


Novel approaches to vacuum and abatement challenges help to enable new, more complex chip technologies and more productive fabs

At SEMICON Korea this year Edwards is celebrating 100 years of technological innovation. It will be showcasing a range of approaches to vacuum and abatement that meet the demands of different semiconductor manufacturing processes and materials.

Amongst these will be a next-generation model of its popular iXH dry vacuum pump that is specifically-designed to handle condensable gases. It offers a higher temperature capability for harsh processes.

“Safe and effective management of process exhaust is a growing concern today, especially with the development of increasingly stringent emissions limits world-wide,” said Jason Yun, general manager, Edwards Korea. “At the same time, advancing technologies are introducing new materials and processes that present challenges, each requiring an optimised vacuum and abatement solution. For example, our next-generation iXH pump is specifically designed to prevent the accumulation of condensable materials inside the pump.” Yun adds, “As Edwards celebrates its 100-year anniversary this year, we look forward to continuing to collaborate closely with our customers to create solutions that enable them to innovate.”

Edwards will also give two presentations at SEMICON Korea:

'CVD Precursors and Associated By-products – Ensuring Maximum Chamber Productivity' by Al Brightman, senior product manager, Edwards. This paper will present optimum vacuum solutions designed to reduce equipment downtime and improve productivity in the fab. In addition, health and safety risks can be greatly reduced (23 January).

'Enabling 3D and High-aspect Ratio Etch Technologies through On-Chamber Process Vacuum' by Adam Stover, spplications aanager, Edwards. This paper will not only discuss traditional pumping challenges and proven solutions, but also the novel application challenges that could potentially gate more complex 3D NAND, PRAM and other device structures (24 January).

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