News Article
Imec and GLOBALFOUNDRIES to drive memory technology
The firms will work together on STT-MRAM to offer enhanced performance and scalability for embedded and standalone applications
Imec and GLOBALFOUNDRIES have expanded joint development efforts to advance STT-MRAM (spin-transfer torque magnetoresistive random access memory) technology. The first IC manufacturer to join imec's R&D program on emerging memory technologies, GLOBALFOUNDRIES completes the value chain of imec's research platform, which fuels industry collaboration from technology up to the system level. GLOBALFOUNDRIES is joining a team with fabless company Qualcomm and several worldwide equipment suppliers providing the complete infrastructure necessary for R&D on STT-MRAM. STT-MRAM technology is a promising high-density alternative to existing memory technologies, like SRAM and DRAM. Together, imec and the program members aim to explore the potential of STT-MRAM, including performance below 1nanosecond (ns) and scalability beyond 10 nanometres (nm) for embedded and standalone applications. "We are elated to intensify our collaboration with GLOBALFOUNDRIES and the other program members on advanced memory technologies - it's a true testament to the value we offer our industrial partners," says Luc Van den hove, president and CEO at imec. He continues,"Our unique research environment harnesses the collective expertise and knowledge of the entire value chain, bringing together foundries, IDMs, fabless and fablite companies, packaging and assembly companies, and equipment and material suppliers to drive innovation and the development of new, competitive products."