Ultratech ships first laser spike anneal system for FinFETs
The firm's LSA201 system has been shipped to a major IDM for advanced logic node development
Ultratech, a supplier of lithography and laser-processing systems used to manufacture semiconductor devices and high-brightness LEDs has shipped its first LSA201 system to a leading IDM.
The LSA201 is built on a new platform that enables precise control over the gases that surround the wafer during processing (i.e., ambient control).
At the customer's facility, the system will be used to develop leading-edge logic technology, mainly focusing on FinFETs.
Ultratech plans to begin volume shipments of the LSA201 in the second half of 2013.
Jeff Hebb, Vice President of Laser Product Marketing at Ultratech says, "As devices scale below 20nm, there are an increasing number of applications beyond dopant activation which involve interface engineering or film modification, such as advanced silicide formation and high K anneal."
"Precise control of the wafer ambient is required for these kinds of processes, and the LSA201 delivers this capability. As more of these types of processes are incorporated into leading-edge device flows, we expect the LSA201 to become our flagship product. We look forward to working with this customer and all of our global customers, and leveraging the LSA201 to develop their sub-20nm processes."
Ultratech's LSA201 LSA system built on the highly customisable Unity Platform includes a patented micro chamber design which enables full-wafer ambient control in a scanning laser system. The micro chamber is a system which does not require the use of vacuum hardware.
The current system is capable of running mixtures of any inert gases, but the micro-chamber architecture is extendible to more reactive gases for future processes. The LSA201 targets middle-of-line (MOL) applications, such as silicide formation, and advanced front-end-of-line (FEOL) applications, such as defect annealing.
The LSA201 is well suited for processes such as interface engineering and film property modification where ambient control is critical at sub-20nm.
