MagnaChip to offer novel 0.35µm SOI BCD process
This process is implemented on SOI substrates for applications such as audio amps, DC-DC converters and PMICs for the mobile and consumer markets
MagnaChip Semiconductor Corporation, a South Korea-based designer and manufacturer of analogue and mixed-signal semiconductor products, is now offering a new 0.35µm silicon-on-insulator (SOI) based Bipolar-CMOS-DMOS (BCD) high voltage process.
This new process features 8V to 16V fully isolated high voltage devices that are implemented on SOI substrates for applications that include audio amps, DC-DC converters, and PMICs for the mobile and consumer markets.
This process also supports standard 3.3V and 5V CMOS digital, mixed-signal and analogue devices. The high voltage 8V to 16V devices are optimised to have low Rsp (specific on-resistance) and low capacitance, for applications requiring power stages.
Integrating CMOS and high voltage devices on SOI substrates with deep trench isolation (DTI) offers minimum isolation and device area, minimum substrate leakage, improved radiation hardness and high-temperature operation. This enables the design of PMICs with unipolar or bipolar supplies (positive and negative supply rails), with latch-up free operation.
"We are very pleased to offer our new 0.35µm BCD high voltage process solution based on silicon-on-insulator substrates," says Namkyu Park, Senior Vice President of Marketing for MagnaChip's Semiconductor Manufacturing Services Division. "We intend to expand our SOI based BCD portfolio with additional voltage ratings to continue to support the growing applications that can benefit from the isolation feature of this process."
