Vishay offers industry-low RDS(on) for a p-channel MOSFET
Vishay Intertechnology has extended its offering of TrenchFET p-channel Gen III power MOSFETs with a new device that offers what it claims is the lowest on-resistance ever for a p-channel MOSFET.
Designed to increase efficiency in mobile computing devices, the -20 V Vishay Siliconix Si7157DP offers on-resistance of 0.0016 and 0.0020 ohms at -10 V and -4.5 V ratings, respectively.
The Si7157DP is optimised for load and battery switches in power management applications for notebook computers.
Today's designers are under pressure to make these devices thinner and lighter, which means reducing battery sizes and, consequently, their run times. At the same time, features such as graphics and WiFi increase battery usage, making power efficiency a paramount goal.
The low on-resistance of the Si7157DP allows designers to achieve lower voltage drops and conduction losses in their circuits, enabling more efficient use of power and longer battery run times. This is especially in peak load conditions - while its compact 6.15 mm by 5.15 mm PowerPAK SO-8 package footprint area saves valuable PCB space.
The device's lower voltage drop at peak currents also provides a larger voltage margin over the UVLO (undervoltage lockout) level, helping prevent undesired undervoltage lockout conditions with the load.
The Si7157DP is 100 percent Rg- and UIS-tested. The MOSFET is halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU. Like other Vishay Siliconix p-channel Gen III MOSFETs, the Si7157DP is built on the latest process technology that packs one billion transistor cells into each square inch of silicon.
Samples and production quantities of the new p-channel MOSFET are available now, with lead times of twelve to sixteen weeks for larger orders.
