Improving TSVs
Researchers are to detail a one step cleaning process for TSVs which include removing photoresist and polymer residues
A team of researchers from Dynaloy and Solid State Equipment Corporation have developed a robust, cleaning solution and process for the removal of post etch residue from through-silicon vias (TSVs).
Kim Pollard, Technology Manager at Dynaloy, will discuss this new cleaning process and chemistry at the Device Packaging Conference for the International Microelectronics Assembly and Packaging Society (iMAPS) on March 12th in Scottsdale, Arizona.
The development and integration of TSVs into 2.5-D and 3-D platforms has grown in response to increasing demand for smaller, faster and smarter electronic systems. To ensure these platforms deliver their promised level of performance and reliability, the TSV must be free of post-etch residue.
The source of the cleaning challenge is lingering fluoropolymer on the TSV sidewall. This residue is left over from the passivation step of the deep reactive ion etching (DRIE) process that's used to make TSVs. Because the chemical characteristics of fluoropolymer are not the same as typical post-RIE etch residues, traditional multi-step cleaning methods do not completely remove this organic compound.
Scientists at Dynaloy and Solid State Equipment Corporation have created a one-step process for total removal of the photoresist and sidewall polymer residues. During her presentation on March 12th, Kim Pollard will describe the process, which involves a soak and high pressure spray using inherently safer proprietary chemistry.
When paired with a megasonic final rinse, this process creates vias that are free of photoresist and polymer residue. Pollard will present evidence of the via's cleanliness using SEM, EDX, and Auger analysis.
