News Article
Toshiba sending samples of low power ICs for Bluetooth
The firm is promoting the adoption of communication functions for wearable healthcare devices
Toshiba has launched the TC35667FTG, a low power Bluetooth IC that supports Bluetooth Low Energy (LE) (version 4) communications.
Sample shipments have already started.
Recently, the number of Bluetooth Smart devices offering Bluetooth LE compatibility is growing. These are devices that adopt Bluetooth core specification Ver. 4.0 or higher with low energy core configuration, and that use GATT (General Attribute Profile) based architecture specified in Bluetooth Ver.4.0.
The new IC adopts an original low-power circuit design and integrates a highly efficient DC-DC converter, reducing peak current consumption to below 6mA and deep sleep current consumption to below 100nA. It promotes long life for small coin cell batteries and will facilitate adoption of Bluetooth LE communications for small devices, such as wearable healthcare devices, sensors and toys.
The IC also integrates an ARM processor, enabling download and execution of customer programs stored in EEPROM. It supports customisation of applications, eliminating need for any external microcontroller. Toshiba will expand the device line-up to include in automotive applications, supporting a wide range of Bluetooth® Smart devices.
Key Features
Low power consumption:
Less than 6mA at peak consumption (@3.3V, -4dBm
Transmitter output power or Receiver operation)
Less than 100nA in deep sleep (@3.3V)
Receiver sensitivity: -91dBm
Supports Bluetooth LE central and peripheral devices
Supports servers and client functions defined by GATT (Generic Attribute Profile)
Applications for the IC include Bluetooth Smart devices, such as wearable devices, healthcare devices, smart phone accessories, remote controllers, and toys.
Sample shipments have already started.
Recently, the number of Bluetooth Smart devices offering Bluetooth LE compatibility is growing. These are devices that adopt Bluetooth core specification Ver. 4.0 or higher with low energy core configuration, and that use GATT (General Attribute Profile) based architecture specified in Bluetooth Ver.4.0.
The new IC adopts an original low-power circuit design and integrates a highly efficient DC-DC converter, reducing peak current consumption to below 6mA and deep sleep current consumption to below 100nA. It promotes long life for small coin cell batteries and will facilitate adoption of Bluetooth LE communications for small devices, such as wearable healthcare devices, sensors and toys.
The IC also integrates an ARM processor, enabling download and execution of customer programs stored in EEPROM. It supports customisation of applications, eliminating need for any external microcontroller. Toshiba will expand the device line-up to include in automotive applications, supporting a wide range of Bluetooth® Smart devices.
Key Features
Low power consumption:
Less than 6mA at peak consumption (@3.3V, -4dBm
Transmitter output power or Receiver operation)
Less than 100nA in deep sleep (@3.3V)
Receiver sensitivity: -91dBm
Supports Bluetooth LE central and peripheral devices
Supports servers and client functions defined by GATT (Generic Attribute Profile)
Applications for the IC include Bluetooth Smart devices, such as wearable devices, healthcare devices, smart phone accessories, remote controllers, and toys.