Alliance Memory introduces high-speed CMOS DDR SDRAMs
Alliance Memory has introduced a new line of high-speed CMOS double data rate synchronous DRAMs (DDR SDRAM) with densities of 64 Mb (AS4C4M16D1-5TIN), 128 Mb (AS4C8M16D1-5TIN), 256 Mb (AS4C16M16D1-5TIN), and 512 Mb (AS4C32M16D1-5TIN) with an industrial temperature range of -40 °C to +85 °C.
The firm says the devices provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications, and telecom products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications. Internally configured as four banks of 1M, 2M, 4M, or 8M word x 16 bits with a synchronous interface, the DDR SDRAMs operate from a single +2.5-V (± 0.2 V) power supply and are lead (Pb)- and halogen-free.
The AS4C4M16D1-5TIN, AS4C8M16D1-5TIN, AS4C16M16D1-5TIN, and AS4C32M16D1-5TIN feature a fast clock rate of 200 MHz and are offered in the 66-pin TSOP II package with a 0.65-mm pin pitch. The 128M, 256 Mb and 512 Mb devices are also available in a TFBGA package. The DDR SDRAMs provide programmable read or write burst lengths of 2, 4, or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximise performance.
Samples and production quantities of the new DDR SDRAMs are available now, with lead times of six to eight weeks for large orders.
