TI unveils MOSFETs for high-current motor control and power designs
The new mid-voltage power MOSFETs include low on-resistance 80 V and 100 V devices in TO-220 packages
Expanding its NexFET portfolio, Texas Instruments (TI) has introduced fourteen power MOSFETs in TO-220 and SON packages that support input voltages from 40 V to 100 V.
The NexFETs include 40 V, 60 V, 80 V and 100 V N-channel devices that provide good thermal performance to a wide range of high-current motor control and power applications.
Two of the new 80 V and 100 V NexFET devices are claimed to achieve one of the industry's lowest on-resistances in a TO-220 package without sacrificing high gate charge - giving designers more power conversion efficiency at higher currents.
The CSD19506 supports 2.0 milliohms of RDSON at an input voltage of up to 80 V, while the CSD19536 achieves 2.3 milliohms of RDSON at a 100 V input.
Both products feature plastic packages with high avalanche capability to support high-stress motor control applications. Designers also can easily select the new products and simulate their power designs by accessing TI's WEBENCH online design tool.
TI also introduced several easy-to-use evaluation modules based on its 60 V NexFET products - all available for ordering in the TI eStore.
Stepper motor pre-driver: DRV8711EVM evaluation module is based on the DRV8711 stepper motor controller paired with NexFET devices to drive a high-current bipolar stepper motor or two brushed DC motors.
Motor Drive BoosterPack: The BOOSTXL-DRV8301 kit is a 10-A, 3-phase brushless DC drive stage based on the DRV8301 pre-driver -- designed for those learning about sensorless brushless control techniques and drive stage design.
Digital power: UCD3138PSFBEVM-027 allows power developers to design a digitally controlled, phase-shifted off-line, 12-V, 360-W power converter application.
Point-of-load control: TPS40170EVM-597 evaluation board features TI's TPS40170 synchronous step-down controllers with two NexFET devices.
TI's NexFET power MOSFET technology is claimed to improve energy efficiency in high-power computing, networking, industrial and power supplies. These high-frequency analogue power MOSFETs give system designers access to advanced DC/DC power conversion.
The CSD19506KCS and CSD19536KCS N-channel devices are available in volume production through TI and its worldwide network of authorised distributors.
Each comes in a 3-pin, standard TO-220 package with a suggested resale price of US$2.30 each for the CSD19506 and US$2.30 each for the CSD19536, in 1,000-unit quantities.
TI also offers 40 V, 60 V, 80 V and 100 V FETs in lead-free 5 mm by 6 mm SON packages.
