News Article
Alliance Memory launches high-speed CMOS DDR3 SDRAMs
Alliance Memory has introduced a new line of high-speed CMOS double data rate 3 synchronous DRAMs (DDR3 SDRAM) and low-voltage DDR3L SDRAMs. They have densities of 1Gb, 2Gb, and 4Gb in 78-ball 9mm x 10.5mm x 1.2mm and 96-ball 9mm x 13mm 1.2 mm FBGA packages. With their double data rate architecture, the devices offer fast transfer rates of up to 1600 Mbps/pin and clock rates of 800MHz. With minimal die shrinks, the company's DDR3 (1.5V) and DDR3L (1.35V) SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, consumer, and telecom applications. This eliminates the need for costly redesigns and part requalification. The AS4C64M16D3, AS4C128M8D3, AS4C128M16D3, AS4C256M8D3, AS4C256M16D3, and AS4C512M8D3 DDR3 SDRAMs operate from a single +1.5-V (±0.075V) power supply, while the AS4C64M16D3L, AS4C128M8D3L, AS4C128M16D3L, AS4C256M8D3L, AS4C256M16D3L, and AS4C512M8D3L DDR3L SDRAMs operate from a single +1.35-V power supply. The devices are offered with a commercial temperature range of 0°C to +95°C and an industrial temperature range of -40°C to +95°C. The DDR3 and DDR3L SDRAMs are internally configured as eight banks of 64M, 128M, 256M, and 512M x 8 bits and/or 16 bits. The devices offer fully synchronous operation and provide programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximise performance. RoHS-compliant, the devices are lead-free and halogen-free. Samples of the new DDR3 and DDR3L SDRAMs are available now, with lead times of six to eight weeks for production quantities.
