VIDEO
400 °C CMOS breakthrough opens critical doors to 3D integration goals
Video Summary
Daphnée Bosch, Research Engineer at CEA-Leti and lead author of the paper presented at IEDM 2025, titled, “High Performance 2.5 V n&p 400 °C SOI MOSFETs: A Breakthrough for Versatile 3D Sequential Integration,”, explains how CEA-Leti, the coordinator of the FAMES Pilot line, has achieved a major milestone for next-generation chip stacking: fully functional 2.5 V SOI CMOS devices fabricated at 400 °C. The devices match electrical performance of devices fabricated at standard thermal budget (>1000 °C), removing one of the last barriers to large-scale 3D sequential integration (3DSI) —a core objective of FAMES.
