VIDEO
The path to fully monolithic silicon RF front-ends with 3D sequential integration
Video Summary
Thibaud Fache, lead author of a paper presented at IEDM 2025: “Unlocking High-Performance Si RF Platforms with SiGe HBT and RFSOI Switch Technologies”, discusses the collaborative work between CEA-Leti and STMicroelectronics, which demonstrates key enablers for a new high-performance and versatile RF Si platform cointegrating best-in-class active and passive devices used in RF and Optical FEM. The paper details 3D sequential integration of silicon-germanium (SiGe) heterojunction bipolar transistors (HBT), RF SOI switches, and high-quality passives on a single wafer - opening a path to highly integrated, low parasitic, and targeting cost-efficient systems for next-generation wireless and wireline communications.
